| PART |
Description |
Maker |
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| EN29LV160AT-70BI EN29LV160AT-90BC EN29LV160AT-90BC |
Replaced by PTN78000W : 16兆位048K × 8 - 1024 kX6位）闪存
Replaced by PTN78000W : 12VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
| EP2S EP2S-3G1 EP2S-3G1TT EP2S-3G2 EP2S-3G2T EP2S-3 |
AUTOMOTIVE RELAYS LOW SOUND PRESSURE
AC 12C 6#16 6#12 SKT RECP LINE
MAX5128 Evaluation Kit/Evaluation System
ER 2C 2#16 PIN RECP LINE
Connectors, Accessories
Replaced by PTN04050C :
MS3126F14-5SWF0
MARK. TAG STRIPS 9705A/8/10 B 11- 20
MY BOOK PRO 500GB EXT HD USB 2.0/FW400/800 3.5 1YR
General Purpose Sensor
Replaced by PT6101 :
LOW SOUND PRESSURE 低的声音压力
Replaced by PTH12020W,PTH08T220W : 低的声音压力
ER 26C 26#16 SKT RECP WALL 低的声音压力
CABLE ASSEMBLY; 7/16" MALE TO N MALE; 52 OHM, RG8A/U COAX 低的声音压力
CABLE ASSEMBLY; 7/16" MALE TO N MALE; 52 OHM, RG8A/U COAX; 12" CABLE LENGTH 低的声音压力
E Core 低的声音压力
RECEPTACLE, INLINE 5 WAY 低的声音压力
Replaced by PTH03020W,PTH04T220W : 低的声音压力
ER 4C 4#16S PIN RECP LINE ER 4C 46S 线性插
Replaced by PTN78000W : 低的声音压力
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| MX23L1651MC-50G MX23L1651 MX23L1651HC-15 |
16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
|
MCNIX[Macronix International]
|
| M390S1723CT1 |
16M x 72 SDRAM DIMM with PLL & Register based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Electronic
|
| V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT
CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
| MBM29LV017-12 MBM29LV017-90 MBM29LV017-90PBT MBM29 |
FLASH MEMORY 16M (2M x 8) BIT
CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
